The Japan Society of Applied Physics

[P-7-14] Reduction in efficiency droop in InGaN/GaN MQWs light-emitting diodes grown on free standing GaN substrate

C. H. Chiu1、C. L. Chao1,2、D. W. Lin1、Z. Y. Li1、H. C. Kuo1、T. C. Lu1、S. C. Wang1 (1.National Chiao Tung Univ.、2.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-7-14