Growth of semipolar InN (10-13) on LaAlO<sub>3</sub>(112) substrate

W. C. Chen; S. Y. Kuo; W. T. Lin; J. S. Tian; F. I. Lai; C. N. Hsiao; L. Chang

doi:https://doi.org/10.7567/SSDM.2010.P-8-1

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-8-1] Growth of semipolar InN (10-13) on LaAlO₃(112) substrate

W. C. Chen^1,4, S. Y. Kuo², W. T. Lin³, J. S. Tian⁴, F. I. Lai³, C. N. Hsiao¹, L. Chang⁴ (1.National Applied Research Labs., 2.Chang Gung Univ., 3.Yuan-Ze Univ., 4.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-8-1

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2010 International Conference on Solid State Devices and Materials

[P-8-1] Growth of semipolar InN (10-13) on LaAlO3(112) substrate

[P-8-1] Growth of semipolar InN (10-13) on LaAlO₃(112) substrate