Growth of semipolar InN (10-13) on LaAlO<sub>3</sub>(112) substrate

W. C. Chen; S. Y. Kuo; W. T. Lin; J. S. Tian; F. I. Lai; C. N. Hsiao; L. Chang

doi:https://doi.org/10.7567/SSDM.2010.P-8-1

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[P-8-1] Growth of semipolar InN (10-13) on LaAlO₃(112) substrate

W. C. Chen^1,4、S. Y. Kuo²、W. T. Lin³、J. S. Tian⁴、F. I. Lai³、C. N. Hsiao¹、L. Chang⁴ (1.National Applied Research Labs.、2.Chang Gung Univ.、3.Yuan-Ze Univ.、4.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-8-1

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2010 International Conference on Solid State Devices and Materials

[P-8-1] Growth of semipolar InN (10-13) on LaAlO3(112) substrate

[P-8-1] Growth of semipolar InN (10-13) on LaAlO₃(112) substrate