[P-8-11] High electron mobility InSb films grown on Si (111) substrate via √7×√3-In and 2×2-In surface reconstructions

S. Khamseh¹、K. Nakatani¹、K. Nakayama¹、M. Mori¹、K. Maezawa¹ (1.Univ. of Toyama , Japan)

https://doi.org/10.7567/SSDM.2010.P-8-11