[P-9-5] NIS tunneling junction fabricated by superconducting Boron-doped diamond

R. Nomura¹, S. Kitagoh¹, M. Watanabe¹, Y. Takano², T. Yamaguchi², H. Kawarada¹ (1.Waseda Univ., 2.NIMS , Japan)

https://doi.org/10.7567/SSDM.2010.P-9-5