[P-9-5] NIS tunneling junction fabricated by superconducting Boron-doped diamond

R. Nomura¹、S. Kitagoh¹、M. Watanabe¹、Y. Takano²、T. Yamaguchi²、H. Kawarada¹ (1.Waseda Univ.、2.NIMS , Japan)

https://doi.org/10.7567/SSDM.2010.P-9-5