[P-14-4] Material Research on High Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells

T. Tachibana¹, T. Sameshima¹, Y. Iwashita^1,2, Y. Kiyota^1,2, T. Chikyow², H. Yoshida^3,4, K. Arafune^3,4, S. Satoh^3,4, A. Ogura^1,4 (1.Meiji Univ., 2.NIMS, 3.Univ. of Hyogo, 4.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-5] a-Si:H Solar Cell with Hexagonal Nano-Cylinder Array on Glass Substrate

W. C. Tu¹, Y. T. Chang¹, C. H. Yang¹, D. J. Yeh¹, C. I. Ho¹, S. C. Lee¹ (1.National Taiwan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-6] Application of sputtered ZnO_1-xS_x buffer layer for Cu(In, Ga)Se₂ solar cells

A. Okamoto¹, T. Minemoto¹, H. Takakura¹ (1.Ritsumeikan Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-7] Surface morphology and device performance of CuInS₂ solar cells prepared by single and two step evaporation methods

S. Fukamizu¹, T. Kondo¹, Y. Oda¹, T. Minemoto¹, H. Takakura¹ (1.Ritsumeikan Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-8] Improvement of Film Quality in CIS Thin Films Fabricated by Non-vacuum, Nanoparticles-based Approach

Y. Zhang^1,2, M. Ito², A. Yamada¹, M. Konagai¹ (1.Tokyo Tech, 2.Toppan Printing Corp., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-9] Interpretation of Crossover in J-V Characteristics of Cu(In,Ga)Se₂ Solar Cell Using Lift-off Process

Y. Abe¹, T. Minemoto¹, H. Takakura¹ (1.Ritsumeikan Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-10] Simulation of temperature characteristics of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light.

Y. Sakurada¹, Y. Ota¹, K. Nishioka¹ (1.Univ. of Miyazaki , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-11] Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

M. Inagaki¹, H. Suzuki², A. Suzuki², K. Mutaguchi², A. Fukuyama², N. Kojima¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Technological Inst., 2.Univ. of Miyazaki , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-12] Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer

Y. K. Su¹, C. Y. Cheng¹, J. Y. Huang¹, Y. W. Lee¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-13] Fabrication of high quality TiO₂ thin films for high conversion efficiency dye-sensitized solar cells by multiple electrophoresis depositions

W. H. Chiu¹, K. M. Lee², W. F. Hsieh^1,3 (1.National Chiao Tung Univ., 2.Indus. Tech. Res. Inst., 3.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

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