[E-3-5] Dynamics of the Charge Centroid in MONOS Memory Cells during Avalanche Injection and FN Injection Based on Incremental-Step-Pulse-Programming

J. Fujiki¹、T. Haimoto¹、N. Yasuda¹、M. Koyama¹ (1.TOSHIBA Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-1] Y-disturb Study of Charge-trapping Type Non-volatile Memory Cell for 45nm Generation Node

T. F. Ou¹、C. H. Cheng¹、W. C. Tzeng¹、G. D. Lee¹、S. H. Ku¹、C. H. Liu¹、K. W. Liu¹、N. K. Zous¹、W. J. Tsai¹、S. W. Huang¹、M. S. Chen¹、W. P. Lu¹、K. C. Chen¹、C. Y. Lu¹ (1.Macronix Int'l Co., Ltd. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al₂O₃ in a Charge-Trap Type Flash Memory Device

J. K. Park¹、Y. Park¹、S. K. Lim²、J. S. Oh²、M. S. Joo³、K. Hong³、B. J. Cho¹ (1.KAIST、2.National NanoFab Center、3.Hynix Semiconductor Inc. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-3] POST-BREAKDOWN RECOVERABLE METAL NANOCRYSTAL-BASED AL₂O₃/SIO₂GATE STACK FOR NON-VOLATILE MEMORY

Y. N. Chen^1,2、K. L. Pey¹、K. E. J. Goh²、Z. Z. Lwin¹、P. K. Singh³、S. Mahapatra³、Q. X. Wang⁴、J. Zhu⁴ (1.Nanyang Tech. Univ.、2.Inst. of Material Res. and Eng.,A*STAR , Singapore、3.Indian Inst. of Tech. , India、4.GlobalFoundries Singapore Pte. Ltd , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-1] Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory Device

W. Kim¹、D. W. Kwon¹、J. H. Ji¹、J. H. Lee¹、B. G. Park¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-2] Band Energy Engineered Metal Nanodots Nonvolatile Memory to Achieve Long Retention Characteristics

T. Hiraki¹、Y. Pei¹、T. Kojima¹、J. C. Bea¹、H. Kino¹、M. Koyanagi¹、T. Tanaka¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-1] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology

K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-2] Current Development Status and Future Challenges of FeRAM

Y. Fujimori¹、H. Kimura¹、Y. Ichida¹、J. Iida¹、K. Ashikaga¹、H. Ito¹、T. Ozawa¹、T. Kanaya¹、N. Kinouchi¹、T. Suzuki¹、T. Date¹、D. Notsu¹、T. Fuchikami¹、Z. Zhiyong¹、M. Kojima¹、M. Moriwake¹、H. Takasu¹ (1.ROHM Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-3] Synthesis of pure phase BiFeO3 films grown on Iridium electrode by MOCVD for ferroelectric memories

Y. Kumura^1,2、S. Y. Yang²、P. Yu²、J. X. Zhang²、J. Seidel²、A. I. Khan²、R. Ramesh² (1.Toshiba Corp. , Japan、2.Univ. of California Berkeley , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-4L] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

T. Miyasako¹、B. N. Q. Trinh¹、T. Kaneda¹、M. Onoue¹、P. T. Tue³、E. Tokumitsu^1,2、T. Shimoda^1,3 (1.JST、2.Tokyo Tech、3.JAIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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