[E-7-1] Current Status and Future Challenge of Embedded High-speed MRAM

S. Fukami¹、T. Suzuki¹、K. Nagahara¹、N. Ohshima¹、S. Saitoh¹、R. Nebashi¹、N. Sakimura¹、H. Honjo¹、K. Mori¹、E. Kariyada¹、Y. Kato¹、K. Suemitsu¹、H. Tanigawa¹、K. Kinoshita¹、S. Miura¹、N. Ishiwata¹、T. Sugibayashi¹ (1.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-2] Phenomenological model for stress and relaxation processes of resistance drift in magnetic tunnel junctions

Y. Kamakura¹、S. Nakano¹、K. Taniguchi¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] A Survey of Cross Point Phase Change Memory Technologies

D. Kau¹ (1.Intel Corp. , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-2] A SiO₂ Nano-thermal Unipolar 0T-1R ReRAM Device with Built-in Diode Isolation

K. P. Chang¹、H. T. Lue¹、K. Y. Hsieh¹、C. Y. Lu¹ (1.Macronix Int'l Co., Ltd. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-3] Resistive Switching Device for Neuromorphic Device Application

K. Seo¹、I. Kim¹、S. Park¹、S. Jung¹、M. Siddik¹、J. Park¹、J. Kong¹、K. Lee¹、B. Lee¹、H. Hwang¹ (1.GIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-4] A Novel Ni/WOx/W ReRAM with Excellent Retention and Low Switching Current

W. C. Chien¹、Y. C. Chen¹、F. M. Lee¹、Y. Y. Lin¹、E. K. Lai¹、Y. D. Yao²、J. Gong³、S. F. Horng³、C. W. Yeh¹、S. C. Tsai¹、C. H. Lee¹、Y. K. Huang¹、C. F. Chen¹、H. F. Kao¹、Y. H. Shih¹、K. Y. Hsieh¹、C. Y. Lu¹ (1.Macronix Int'l Co., Ltd.、2.Fu Jen Univ.、3.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-5L] Microstructural Characterization in Reliability Measurement of PRAM

J. Bae¹、K. Hwang¹、K. Park¹、S. Jeon¹、D. H. Kang¹、S. Park¹、J. Ahn¹、S. Kim¹、G. Jeong¹、C. Chung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-1] Overview and Future Challenges of Hafnium Oxide ReRAM

Y. S. Chen^1,2、H. Y. Lee^1,2、P. S. Chen³、P. Y. Gu¹、Y. Y. Hsu¹、W. H. Liu¹、C. H. Tsai¹、S. M. Wang¹、S. S. Sheu¹、P. C. Chiang¹、W. P. Lin¹、W. S. Chen¹、F. T. Chen¹、C. H. Lien²、M. J. Tsai¹ (1.ITRI、2.National Tsing Hua Univ.、3.Mingshin Univ. of Sci. and Tech. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-2] A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Y. H. Tseng¹、S. S. Chung^1,2、S. Shin²、S. S. M. Kang²、H. Y. Lee³、M. J. Tsai³ (1.National Chiao Tung Univ. , Taiwan、2.Univ. of California, Merced , USA、3.ITRI , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-3] High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process

K. Okamoto¹、M. Tada¹、K. Ito¹、Y. Saito¹、S. Ishida¹、H. Hada¹ (1.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード