[P-5-15L] Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Widely Tuning Range in 0.18µm CMOS

Y. S. Tiao¹、M. L. Sheu¹、L. J. Tsao¹ (1.National Chi-Nan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-1] Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor

K. Yamaki¹、S. Sekino²、T. Tai¹、S. Nakamura²、T. Yoshitake²、A. Furukawa¹ (1.Tokyo Univ. of Sci.、2.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-2] Low Gate Leakage Current InAlAs/InGaAs Metamorphic HEMTs Using HBr + UV Illumination Gate Treatment Technology

C. H. Chen¹、C. W. Yang¹、C. K. Lin¹、H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-3] The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness

K. S. Jeong¹、Y. S. Kim²、J. G. Park¹、S. D. Yang¹、Y. M. Kim¹、H. J. Yun¹、H. D. Lee¹、G. W. Lee¹ (1.Chungnam National Univ.、2.National NanoFab Center , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-5] Short Channel Effect of Indium-Gallium-Zinc-Oxide Thin Film Transistors

S. H. Kuk¹、D. W. Kang¹、J. S. Lee¹、S. J. Kim¹、J. Y. Kwon¹、M. K. Han¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-6] Physics-Based Modeling and Analysis of Compound Semiconductor Devices and Circuits in Extreme Environments

M. Turowski¹、A. Raman¹、A. Fedoseyev¹ (1.CFD Research Corp. (CFDRC) , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-7] Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs

C. W. Lin¹、C. K. Lin¹、H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-8] 10-Gb/s InGaAs P-I-N photodetector with planar buried heterostructure

Y. S. Wang^1,3、S. J. Chang¹、Y. Z. Chiou²、S. P. Chang¹、Y. H. Wu³、R. T. Hsu³、W. Lin³ (1.National Cheng Kung Univ.、2.Southern Taiwan University、3.LandMark Optoelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-9] Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation

S. Liu¹、J. Wang¹、R. Gong¹、Z. Dong¹、M. Yu¹、C. P. Wen¹、C. Zeng²、Y. Cai²、B. Zhang² (1.Peking Univ.、2.Suzhou Inst. of Nano-tech and Nano-bionics , China)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-10] Current stress instability analysis of amorphous InGaZnO thin film transistors

J. H. Kang¹、E. N. Cho¹、I. Yun¹ (1.Yonsei Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

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