[E-7-1] Current Status and Future Challenge of Embedded High-speed MRAM

S. Fukami¹, T. Suzuki¹, K. Nagahara¹, N. Ohshima¹, S. Saitoh¹, R. Nebashi¹, N. Sakimura¹, H. Honjo¹, K. Mori¹, E. Kariyada¹, Y. Kato¹, K. Suemitsu¹, H. Tanigawa¹, K. Kinoshita¹, S. Miura¹, N. Ishiwata¹, T. Sugibayashi¹ (1.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Phenomenological model for stress and relaxation processes of resistance drift in magnetic tunnel junctions

Y. Kamakura¹, S. Nakano¹, K. Taniguchi¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-8-1] A Survey of Cross Point Phase Change Memory Technologies

D. Kau¹ (1.Intel Corp. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-8-2] A SiO₂ Nano-thermal Unipolar 0T-1R ReRAM Device with Built-in Diode Isolation

K. P. Chang¹, H. T. Lue¹, K. Y. Hsieh¹, C. Y. Lu¹ (1.Macronix Int'l Co., Ltd. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-8-3] Resistive Switching Device for Neuromorphic Device Application

K. Seo¹, I. Kim¹, S. Park¹, S. Jung¹, M. Siddik¹, J. Park¹, J. Kong¹, K. Lee¹, B. Lee¹, H. Hwang¹ (1.GIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-8-4] A Novel Ni/WOx/W ReRAM with Excellent Retention and Low Switching Current

W. C. Chien¹, Y. C. Chen¹, F. M. Lee¹, Y. Y. Lin¹, E. K. Lai¹, Y. D. Yao², J. Gong³, S. F. Horng³, C. W. Yeh¹, S. C. Tsai¹, C. H. Lee¹, Y. K. Huang¹, C. F. Chen¹, H. F. Kao¹, Y. H. Shih¹, K. Y. Hsieh¹, C. Y. Lu¹ (1.Macronix Int'l Co., Ltd., 2.Fu Jen Univ., 3.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-8-5L] Microstructural Characterization in Reliability Measurement of PRAM

J. Bae¹, K. Hwang¹, K. Park¹, S. Jeon¹, D. H. Kang¹, S. Park¹, J. Ahn¹, S. Kim¹, G. Jeong¹, C. Chung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-9-1] Overview and Future Challenges of Hafnium Oxide ReRAM

Y. S. Chen^1,2, H. Y. Lee^1,2, P. S. Chen³, P. Y. Gu¹, Y. Y. Hsu¹, W. H. Liu¹, C. H. Tsai¹, S. M. Wang¹, S. S. Sheu¹, P. C. Chiang¹, W. P. Lin¹, W. S. Chen¹, F. T. Chen¹, C. H. Lien², M. J. Tsai¹ (1.ITRI, 2.National Tsing Hua Univ., 3.Mingshin Univ. of Sci. and Tech. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-9-2] A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Y. H. Tseng¹, S. S. Chung^1,2, S. Shin², S. S. M. Kang², H. Y. Lee³, M. J. Tsai³ (1.National Chiao Tung Univ. , Taiwan, 2.Univ. of California, Merced , USA, 3.ITRI , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-9-3] High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process

K. Okamoto¹, M. Tada¹, K. Ito¹, Y. Saito¹, S. Ishida¹, H. Hada¹ (1.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (181 - 190)

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