Gd Dual-sputtered Ratio

P. C. Chou¹, J. C. Wang¹, C. S. Lai¹, J. Y. Lin¹, W. C. Chang¹, K. T. Chen¹, Y. C. Chung¹, Y. H. Lin¹, I. T. Wang¹, C. I. Wu², P. S. Wang² (1.Chang Gung Univ., 2.National Taiwan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Stability origin of metastable higher-k phase HfO₂ at room temperature

Y. Nakajima¹, K. Kita¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Overview and Challenges in Source/Drain Formation Technology in High Performance Transistors.

K. Suguro¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Raised S/D for Advanced Planar MOSFET devices: Challenges and Applications for the 20nm Node and Beyond

N. Loubet¹, P. Khare¹, S. Mehta², S. Ponoth², B. Haren², Q. Liu¹, K. Cheng², J. Kuss², T. Adam², B. Doris², V. Paruchuri², W. Kleemeier¹, R. Sampson¹ (1.STMicroelectronics, 2.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Raman Spectroscopy Measurement of Silicidation Induced Stress in Si and its Impact on Performances of Metal Source/Drain MOSFETs

S. Migita¹, V. Poborchii¹, T. Tada¹, Y. Morita¹, W. Mizubayashi¹, H. Ota¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm CMOS technology and Beyond

K. Ohuchi¹, N. Kusunoki¹, F. Matsuoka¹ (1.Toshiba America Electronic Components, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-6-5L] Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si_0.2Ge_0.8

Y. Kawamura¹, M. Uematsu¹, K. M. Itoh¹, Y. Hoshi², K. Sawano², Y. Shiraki², E. Haller³, M. Myronov⁴ (1.Keio Univ., 2.Tokyo City Univ. , Japan, 3.Univ. of California Berkeley , USA, 4.The Univ. of Warwick , UK)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Dopant/carrier profiling in nanostructures.

W. Vandervorst^1,2, P. Eyben¹, A. Schulze^1,2, J. Mody^1,2, S. Koelling^1,2, A. Kambham^1,2, M. Gilbert¹ (1.IMEC, 2.Instituut voor Kern- en Stralingsfysica , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Hole generation in B-implanted Ge without annealing: Formation of B₁₂ cluster acting as a double acceptor

M. Koike¹, Y. Kamimuta¹ (1.MIRAI-Toshiba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily B-doped Silicon

H. Itokawa^1,2, A. Ohta², M. Ikeda², I. Mizushima¹, S. Miyazaki² (1.Toshiba Corp., 2.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (61 - 70)

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