[A-1-2] High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa¹、N. Tsurumi¹、M. Nishijima¹、Y. Anda¹、M. Ishida¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-2