[A-1-2] High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa¹, N. Tsurumi¹, M. Nishijima¹, Y. Anda¹, M. Ishida¹, T. Ueda¹, T. Tanaka¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-2