[A-1-3] RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond

K. Hirama¹、M. Kasu¹、Y. Taniyasu¹ (1.NTT Corp. NTT Basic Res. Labs. , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-3