[A-1-6] Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor

H. A. Shih¹、M. Kudo¹、M. Akabori¹、T. Suzuki¹ (1.JAIST , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-6