[A-5-3] Effects of Excimer Laser annealing of Oxide Semiconductor Films

M. Fujii¹, R. Ishihara², T. Chen², J. Van der Cingel², M. R. T. Mofrad², M. Kasami³, K. Yano³, M. Horita^1,4, Y. Ishikawa^1,4, Y. Uraoka^1,4 (1.NAIST , Japan, 2.Delft University of Technology , The Netherlands, 3.Idemitsu Kosan Co., Ltd., 4.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.A-5-3