[A-5-3] Effects of Excimer Laser annealing of Oxide Semiconductor Films

M. Fujii¹、R. Ishihara²、T. Chen²、J. Van der Cingel²、M. R. T. Mofrad²、M. Kasami³、K. Yano³、M. Horita^1,4、Y. Ishikawa^1,4、Y. Uraoka^1,4 (1.NAIST , Japan、2.Delft University of Technology , The Netherlands、3.Idemitsu Kosan Co., Ltd.、4.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.A-5-3