[A-5-4] High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

H. W. Zan¹、C. C. Yeh²、C. C. Tsai¹、H. F. Meng¹ (1.National Chiao Tung Univ.、2.E Ink Holdings Inc. , Taiwan)

https://doi.org/10.7567/SSDM.2011.A-5-4