[A-8-2] Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaOxNy Gate Dielectric T. Sato1, J. Okayasu1, T. Yamanouchi1, T. Yashiro1, J. Suzuki1, M. Takikawa1 (1.Advantest Labs. Ltd. , Japan) https://doi.org/10.7567/SSDM.2011.A-8-2