[A-8-2] Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaO_xN_y Gate Dielectric

T. Sato¹、J. Okayasu¹、T. Yamanouchi¹、T. Yashiro¹、J. Suzuki¹、M. Takikawa¹ (1.Advantest Labs. Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.A-8-2