Fabrication of GaN MOSFET using Selectively Re-grown n<sup>+</sup>-GaN Layer on Etched Source and Drain Regions

D. S. Kim; H. S. Kang; C. H. Won; C. H. Bu; K. I. Jang; C. M. Yang; K. S. Im; K. W. Kim; S. D. Jung; R. H. Kim; M. K. Kwon; J. H. Lee

doi:https://doi.org/10.7567/SSDM.2011.AL-6-6

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-6-6] Fabrication of GaN MOSFET using Selectively Re-grown n⁺-GaN Layer on Etched Source and Drain Regions

D. S. Kim¹、H. S. Kang¹、C. H. Won¹、C. H. Bu¹、K. I. Jang¹、C. M. Yang¹、K. S. Im¹、K. W. Kim¹、S. D. Jung¹、R. H. Kim¹、M. K. Kwon¹、J. H. Lee¹ (1.Kyungpook National Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.AL-6-6

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2011 International Conference on Solid State Devices and Materials

[AL-6-6] Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions

[AL-6-6] Fabrication of GaN MOSFET using Selectively Re-grown n⁺-GaN Layer on Etched Source and Drain Regions