The Japan Society of Applied Physics

[AL-6-6] Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions

D. S. Kim1、H. S. Kang1、C. H. Won1、C. H. Bu1、K. I. Jang1、C. M. Yang1、K. S. Im1、K. W. Kim1、S. D. Jung1、R. H. Kim1、M. K. Kwon1、J. H. Lee1 (1.Kyungpook National Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.AL-6-6