[AL-7-1] InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage

Q. Zhou¹、H. Chen¹、C. Zhou¹、Z. H. Feng²、S. J. Cai²、K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech.、2.Hebei Semiconductor Res. Inst. , China)

https://doi.org/10.7567/SSDM.2011.AL-7-1