[AL-7-1] InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage
Q. Zhou1, H. Chen1, C. Zhou1, Z. H. Feng2, S. J. Cai2, K. J. Chen1
(1.Hong Kong Univ. of Sci. and Tech., 2.Hebei Semiconductor Res. Inst. , China)
https://doi.org/10.7567/SSDM.2011.AL-7-1
