[AL-7-2] Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs

N. Azumaishi¹、N. Harada¹、T. Hashizume^1,2 (1.Hokkaido Univ.、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.AL-7-2