[AL-7-3] AlGaN/GaN HFET grown on 6-inch diameter Si(111) substrates by MOCVD

S. M. Cho¹、E. J. Hwang¹、J. Park¹、K. C. Kim¹、T. Jang¹ (1.LG Electronics Inst. of Tech. , Korea)

https://doi.org/10.7567/SSDM.2011.AL-7-3