[B-4-1] Organic resistive memory device composed of hyperbranched polystyrene and gold nanoparticles
K. Fujita1, K. Yasui2, M. Ozawa2, K. Odoi2, H. Ichikawa1
(1.Kyushu Univ., 2.Nissan Chemical Industries, Ltd. , Japan)
https://doi.org/10.7567/SSDM.2011.B-4-1