[B-4-1] Organic resistive memory device composed of hyperbranched polystyrene and gold nanoparticles

K. Fujita¹、K. Yasui²、M. Ozawa²、K. Odoi²、H. Ichikawa¹ (1.Kyushu Univ.、2.Nissan Chemical Industries, Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.B-4-1