The Japan Society of Applied Physics

[B-6-6] Electric and structural characterizations on annealed dinaphthothienothiophene thin-film transistors.

K. Kuribara1、H. Wang2、N. Uchiyama1、K. Fukuda1、T. Yokota1、T. Sekitani1、U. Zschieschang3、C. Jaye4、D. Fischer4、H. Klauk3、T. Yamamoto5、K. Takimiya5、M. Ikeda6、H. Kuwabara6、Y. L. Loo2、T. Someya1 (1.Univ. of Tokyo , Japan、2.Princeton Univ. , U.S.A.、3.Max Planck Inst. for Solid State Res. , Germany、4.National Inst. of Standards and Tech. , U.S.A.、5.Hiroshima Univ.、6.Nippon Kayaku Corp., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.B-6-6