[B-6-6] Electric and structural characterizations on annealed dinaphthothienothiophene thin-film transistors.

K. Kuribara¹, H. Wang², N. Uchiyama¹, K. Fukuda¹, T. Yokota¹, T. Sekitani¹, U. Zschieschang³, C. Jaye⁴, D. Fischer⁴, H. Klauk³, T. Yamamoto⁵, K. Takimiya⁵, M. Ikeda⁶, H. Kuwabara⁶, Y. L. Loo², T. Someya¹ (1.Univ. of Tokyo , Japan, 2.Princeton Univ. , U.S.A., 3.Max Planck Inst. for Solid State Res. , Germany, 4.National Inst. of Standards and Tech. , U.S.A., 5.Hiroshima Univ., 6.Nippon Kayaku Corp., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.B-6-6