High performance of pentacene field effect transistors using graphene electrodes and substrate treatments

S. Lee; G. Jo; S.J. Kang; G. Wang; M. Choi; W. Park; J. Yoon; T. Kwon; D. Y. Kim; Y. H. Kahng; T. Lee

doi:https://doi.org/10.7567/SSDM.2011.B-8-3

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[B-8-3] High performance of pentacene field effect transistors using graphene electrodes and substrate treatments

S. Lee¹, G. Jo¹, S.J. Kang¹, G. Wang¹, M. Choi¹, W. Park¹, J. Yoon¹, T. Kwon¹, D. Y. Kim¹, Y. H. Kahng¹, T. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech., 2.Seoul National Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.B-8-3

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