High performance of pentacene field effect transistors using graphene electrodes and substrate treatments

S. Lee; G. Jo; S.J. Kang; G. Wang; M. Choi; W. Park; J. Yoon; T. Kwon; D. Y. Kim; Y. H. Kahng; T. Lee

doi:https://doi.org/10.7567/SSDM.2011.B-8-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[B-8-3] High performance of pentacene field effect transistors using graphene electrodes and substrate treatments

S. Lee¹、G. Jo¹、S.J. Kang¹、G. Wang¹、M. Choi¹、W. Park¹、J. Yoon¹、T. Kwon¹、D. Y. Kim¹、Y. H. Kahng¹、T. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech.、2.Seoul National Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.B-8-3

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