Fabrication of Graphene Directly on SiO<sub>2</sub> without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato; M. Inukai; E. Ikenaga; T. Muro; S. Ogawa; Y. Takakuwa; H. Nakano; A. Kawabata; M. Nihei; N. Yokoyama

doi:https://doi.org/10.7567/SSDM.2011.C-1-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato¹, M. Inukai², E. Ikenaga², T. Muro², S. Ogawa³, Y. Takakuwa³, H. Nakano¹, A. Kawabata¹, M. Nihei¹, N. Yokoyama¹ (1.AIST/GNC, 2.JASRI/SPring-8, 3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.C-1-2

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2011 International Conference on Solid State Devices and Materials

[C-1-2] Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon