Fabrication of Graphene Directly on SiO<sub>2</sub> without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato; M. Inukai; E. Ikenaga; T. Muro; S. Ogawa; Y. Takakuwa; H. Nakano; A. Kawabata; M. Nihei; N. Yokoyama

doi:https://doi.org/10.7567/SSDM.2011.C-1-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato¹、M. Inukai²、E. Ikenaga²、T. Muro²、S. Ogawa³、Y. Takakuwa³、H. Nakano¹、A. Kawabata¹、M. Nihei¹、N. Yokoyama¹ (1.AIST/GNC、2.JASRI/SPring-8、3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.C-1-2

▲

2011 International Conference on Solid State Devices and Materials

[C-1-2] Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon