Initial Growth Observation of Multilayer Graphene on SiO<sub>2</sub>/Si substrates Using Raman Spectroscopy and XPS

Y. Ojiro; S. Ogawa; M. Inukai; M. Sato; E. Ikenaga; T. Muro; M. Nihei; Y. Takakuwa; N. Yokoyama

doi:https://doi.org/10.7567/SSDM.2011.C-1-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[C-1-3] Initial Growth Observation of Multilayer Graphene on SiO₂/Si substrates Using Raman Spectroscopy and XPS

Y. Ojiro¹、S. Ogawa¹、M. Inukai²、M. Sato^1,3、E. Ikenaga²、T. Muro²、M. Nihei³、Y. Takakuwa¹、N. Yokoyama³ (1.Tohoku Univ.、2.JASRI/SPring-8、3.AIST/GNC , Japan)

https://doi.org/10.7567/SSDM.2011.C-1-3

▲

2011 International Conference on Solid State Devices and Materials

[C-1-3] Initial Growth Observation of Multilayer Graphene on SiO2/Si substrates Using Raman Spectroscopy and XPS

[C-1-3] Initial Growth Observation of Multilayer Graphene on SiO₂/Si substrates Using Raman Spectroscopy and XPS