[C-3-2] Pico-Ampere Switching ReRAM with Vertically Contacted 5 nm-diameter Carbon Nanotube Electrodes for BEOL-Based Memory

H. Nakano¹, M. Takahashi¹, T. Murakami¹, A. Kawabata¹, M. Sato¹, M. Nihei¹, N. Yokoyama¹ (1.GNC, AIST , Japan)

https://doi.org/10.7567/SSDM.2011.C-3-2