[C-4-3] Nano-scale Boron Mapping in Silicon Devices Using C_s-corrected STEM-EELS

N. Nakanishi¹、H. Arie¹、Y. Kunimune¹、T. Ide¹、Y. Hirose¹、N. Hattori¹、T. Koyama¹ (1.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.C-4-3