[D-1-2] Accurate and Ready-to-use Parasitic Capacitances Models for Advanced 2D/3D CMOS Device Structure Comparison

J. Lacord^1,2、D. Hoguet¹、D. Rideau¹、G. Ghibaudo²、F. Boeuf¹ (1.STMicroelectronics、2.IMEP-LAHC , France)

https://doi.org/10.7567/SSDM.2011.D-1-2