Device characteristics of planar-type In<sub>0.53</sub>Ga<sub>0.47</sub>As channel band-to-band tunneling MOSFETs

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

R. Iida¹, S. H. Kim¹, M. Yokoyama¹, N. Taoka¹, S. H. Lee¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo , Japan)