[D-5-4] Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs

Y. Kamakura^1,2、T. Himukashi¹、H. Tsuji¹、K. Taniguchi¹ (1.Osaka Univ.、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.D-5-4