[D-6-2] Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

K. Ikeda¹、M. Oda¹、T. Irisawa¹、Y. Kamimuta¹、Y. Moriyama¹、T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

https://doi.org/10.7567/SSDM.2011.D-6-2