[D-6-2] Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

K. Ikeda¹, M. Oda¹, T. Irisawa¹, Y. Kamimuta¹, Y. Moriyama¹, T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

https://doi.org/10.7567/SSDM.2011.D-6-2