[D-6-4] Enhanced Performance of Tri-Gate Transistors with Gnox Using Optimized Novel SOI Realization Technology

S. H. Kim^1,2、H. J. Bae¹、C. W. Oh¹、D. W. Kim¹、S. Yamada¹、G. Y. Jin¹、Y. Roh² (1.Samsung Electronics、2.Sungkyunkwan Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.D-6-4