The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[D-6-4] Enhanced Performance of Tri-Gate Transistors with Gnox Using Optimized Novel SOI Realization Technology

S. H. Kim1,2, H. J. Bae1, C. W. Oh1, D. W. Kim1, S. Yamada1, G. Y. Jin1, Y. Roh2 (1.Samsung Electronics, 2.Sungkyunkwan Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.D-6-4