[D-7-2] Carrier Transport Mechanisms in Schottky Barrier Source/Drain Nanowire FETs with Lateral Silicidation Process

T. Ishikawa¹、M. Saitoh¹、K. Ota¹、C. Tanaka¹、T. Numata¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.D-7-2