[D-7-2] Carrier Transport Mechanisms in Schottky Barrier Source/Drain Nanowire FETs with Lateral Silicidation Process

T. Ishikawa¹, M. Saitoh¹, K. Ota¹, C. Tanaka¹, T. Numata¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.D-7-2