[E-1-3] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO₂/GeO₂ Bilayer by Nitrogen Incorporation

K. Sakamoto¹、Y. Iwamura¹、K. Yamamoto¹、H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-1-3