The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-1-3] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation

K. Sakamoto1, Y. Iwamura1, K. Yamamoto1, H. Yang1, D. Wang1, H. Nakashima1 (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-1-3