[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy
K. Kakushima1、J. Kanehara1、Y. Izumi2、T. Muro2、T. Kinoshita2、P. Ahmet1、K. Tsutsui1、T. Hattori1、H. Iwai1
(1.Tokyo Tech、2.JASRI/SPring-8 , Japan)
https://doi.org/10.7567/SSDM.2011.E-3-2